PARAMETER SENSITIVITY OF NARROW-CHANNEL MOSFETS

被引：5
作者：
LI, EH [1 ]
NG, HC [1 ]
机构：
[1] CITY POLYTECH HONG KONG,DEPT APPL SCI,KOWLOON,HONG KONG
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 11期
关键词：
Narrow Channel Models - Threshold Voltage Sensitivity;
D O I：
10.1109/55.119213
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical method is used to examine the threshold voltage sensitivity due to various device parameter fluctuations in the narrow-channel MOSFET's. The analysis is based on a narrow-channel model with a semi-recessed field-isolation structure and a short-channel modification. The results show that while the dopant-concentration and fixed-oxide-charges fluctuation increases sensitivity, the back-gate-bias fluctuation decreases sensitivity as the channel width is reduced. The present strategy is simple and is therefore ideal for miniaturized device processing simulation.
引用
收藏
页码：608 / 610
页数：3
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