PARAMETER SENSITIVITY OF NARROW-CHANNEL MOSFETS

被引：6
作者：
LI, EH [1 ]
NG, HC [1 ]
机构：
[1] CITY POLYTECH HONG KONG,DEPT APPL SCI,KOWLOON,HONG KONG
来源：
IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 11期
关键词：
Narrow Channel Models - Threshold Voltage Sensitivity;
D O I：
10.1109/55.119213
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical method is used to examine the threshold voltage sensitivity due to various device parameter fluctuations in the narrow-channel MOSFET's. The analysis is based on a narrow-channel model with a semi-recessed field-isolation structure and a short-channel modification. The results show that while the dopant-concentration and fixed-oxide-charges fluctuation increases sensitivity, the back-gate-bias fluctuation decreases sensitivity as the channel width is reduced. The present strategy is simple and is therefore ideal for miniaturized device processing simulation.
引用
收藏
页码：608 / 610
页数：3
相关论文
共 9 条
[1]   A NEW ANALYTICAL AND STATISTICAL-ORIENTED APPROACH FOR THE TWO-DIMENSIONAL THRESHOLD ANALYSIS OF SHORT-CHANNEL MOSFETS [J].
CONTI, M ;
TURCHETTI, C ;
MASETTI, G .
SOLID-STATE ELECTRONICS, 1989, 32 (09) :739-747
[2]  
HONG KM, 1987, J APPL PHYS, V66, P2387
[3]  
KOETZLE G, 1989 P VLSI COMP PER, P5
[4]   EFFECT OF STATISTICAL VARIATION ON THRESHOLD VOLTAGE IN NARROW-CHANNEL MOSFETS [J].
LI, EH ;
LIU, CK ;
NG, HC .
ELECTRONICS LETTERS, 1990, 26 (17) :1390-1391
[5]   THE NARROW-CHANNEL EFFECT IN MOSFETS WITH SEMI-RECESSED OXIDE STRUCTURES [J].
LI, EH ;
HONG, KM ;
CHENG, YC ;
CHAN, KY .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :692-701
[6]   STATISTICAL CONTROL OF VLSI FABRICATION PROCESSES [J].
MOZUMDER, PK ;
STROJWAS, AJ .
PROCEEDINGS OF THE IEEE, 1990, 78 (02) :436-455
[7]   INVESTIGATION OF PARAMETER SENSITIVITY OF SHORT CHANNEL MOSFETS [J].
SELBERHERR, S ;
SCHUTZ, A ;
POTZL, H .
SOLID-STATE ELECTRONICS, 1982, 25 (02) :85-90
[8]  
YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2
[9]   THRESHOLD-SENSITIVITY MINIMIZATION OF SHORT-CHANNEL MOSFETS BY COMPUTER-SIMULATION [J].
YOKOYAMA, K ;
YOSHII, A ;
HORIGUCHI, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1509-1514
1