GAIN-COUPLED OPTICAL LOGIC IN SEMICONDUCTOR-LASERS

被引：2
作者：
GALLAGHER, DFG
机构：
[1] University of Cambridge, Engineering Department, Cambridge
来源：
APPLIED OPTICS | 1990年 / 29卷 / 29期
关键词：
Ds: Optical logic; Gain coupling; Nonuniform facets; Semiconductor laser;
D O I：
10.1364/AO.29.004359
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A new form of optical logic device has been devised giving NOT, NOR and NAND functions. It is based on gain competition between two optical modes in a semiconductor waveguide cavity. These modes are spatially separated at the input-output facet providing high input/output isolation. The input also sees very low reflection. Although the device relies on changes in carrier level, the switching speed is much greater than the carrier lifetime, with values of 70 to 100 ps being expected with multiquantum well devices. The device should have fan-outs of 5 to 15 and be fully cascadable. Because the input is not injected into a Fabry-Perot cavity, it is not wavelength sensitive. © 1990 Optical Society of America.
引用
收藏
页码：4359 / 4371
页数：13
相关论文
共 39 条
[21]   1.55-MU-M INGAASP DISTRIBUTED FEEDBACK VAPOR-PHASE TRANSPORTED BURIED HETEROSTRUCTURE LASERS [J].
KOCH, TL ;
BRIDGES, TJ ;
BURKHARDT, EG ;
CORVINI, PJ ;
COLDREN, LA ;
LINKE, RA ;
TSANG, WT ;
LOGAN, RA ;
JOHNSON, LF ;
KAZARINOV, RF ;
YEN, R ;
WILT, DP .
APPLIED PHYSICS LETTERS, 1985, 47 (01) :12-14
[22]   GAIN-CONTROLLED ALL-OPTICAL INVERTER SWITCH IN A SEMICONDUCTOR-LASER AMPLIFIER [J].
KOGA, M ;
TOKURA, N ;
NAWATA, K .
APPLIED OPTICS, 1988, 27 (19) :3964-3965
[23]  
Kurnosov V. D., 1974, Soviet Journal of Quantum Electronics, V4, P17, DOI 10.1070/QE1974v004n01ABEH005662
[24]   THE QUANTUM WELL SELF-ELECTROOPTIC EFFECT DEVICE - OPTOELECTRONIC BISTABILITY AND OSCILLATION, AND SELF-LINEARIZED MODULATION [J].
MILLER, DAB ;
CHEMLA, DS ;
DAMEN, TC ;
WOOD, TH ;
BURRUS, CA ;
GOSSARD, AC ;
WIEGMANN, W .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (09) :1462-1476
[25]   CW ELECTROOPTICAL PROPERTIES OF INGAASP (LAMBDA = 1.3 MU-M) BURIED-HETEROSTRUCTURE LASERS [J].
NELSON, RJ ;
WILSON, RB ;
WRIGHT, PD ;
BARNES, PA ;
DUTTA, NK .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :202-207
[26]   SPECTRAL BISTABILITY IN COUPLED CAVITY SEMICONDUCTOR-LASERS [J].
OLSSON, NA ;
TSANG, WT ;
LOGAN, RA ;
KAMINOW, IP ;
KO, JS .
APPLIED PHYSICS LETTERS, 1984, 44 (04) :375-377
[27]  
PHILOPPOV P, 1987, ACTA POLITECHNICA CE, V1, P63
[28]   REALIZATION OF AN INSB BISTABLE DEVICE AS AN OPTICAL AND GATE AND ITS USE TO MEASURE CARRIER RECOMBINATION TIMES [J].
SEATON, CT ;
SMITH, SD ;
TOOLEY, FAP ;
PRISE, ME ;
TAGHIZADEH, MR .
APPLIED PHYSICS LETTERS, 1983, 42 (02) :131-133
[29]  
Semenov A. T., 1974, Soviet Journal of Quantum Electronics, V4, P100, DOI 10.1070/QE1974v004n01ABEH006630
[30]  
Smith G.D., 1985, NUMERICAL SOLUTION P
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