PHOTOLUMINESCENCE TRANSIENTS DUE TO HOLE CAPTURE AT DX CENTERS IN ALXGA1-XAS-SI

被引:40
作者
BRUNTHALER, G [1 ]
PLOOG, K [1 ]
JANTSCH, W [1 ]
机构
[1] JOHANNES KEPLER UNIV,FESTKORPERPHYS ABT,A-4040 LINZ,AUSTRIA
关键词
D O I
10.1103/PhysRevLett.63.2276
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:2276 / 2279
页数:4
相关论文
共 16 条
[1]   TRAPPING CHARACTERISTICS OF TE-RELATED CENTERS IN GAAS1-XPX [J].
CALLEJA, E ;
MUNOZ, E ;
JIMENEZ, B ;
GOMEZ, A ;
GARCIA, F ;
KELLERT, F .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5295-5301
[2]   THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].
CHADI, DJ ;
CHANG, KJ .
PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876
[3]   SULFUR-RELATED TRAP IN GAAS1-XPX [J].
CRAVEN, RA ;
FINN, D .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6334-6343
[4]  
JANTSCH W, 1989, 15TH P INT C DEF SEM, P1131
[5]  
KHACHATURYAN K, 1989, 15TH P INT C DEF SEM, P1067
[6]   LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].
LANG, DV ;
LOGAN, RA .
PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639
[7]   HIGH-PRESSURE DEPENDENCE OF THE ROOM-TEMPERATURE MINORITY-CARRIER LIFETIMES IN GAAS [J].
LEROUX, M ;
GIBART, P ;
SALLESE, JM ;
VERIE, C .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (04) :233-234
[8]   EVIDENCE FOR LARGE LATTICE-RELAXATION AT THE DX CENTER IN SI-DOPED ALXGA1-XAS [J].
MOONEY, PM ;
NORTHROP, GA ;
MORGAN, TN ;
GRIMMEISS, HG .
PHYSICAL REVIEW B, 1988, 37 (14) :8298-8307
[9]  
MOONEY PM, 1988, MATERIALS RES SOC S, V104, P561
[10]  
Pantelides S. T., 1986, DEEP CTR SEMICONDUCT, P489