THIN SI3N4 FILMS ON SI WAFERS

被引：0

作者：

EBEL, MF ^{[1
]}

EBEL, H ^{[1
]}

BUCHNER, H ^{[1
]}

CHABICOVSKY, R ^{[1
]}

机构：

[1] VIENNA TECH UNIV,INST ALLGEMEINE ELEKTROTECH & ELEKTR,A-1040 VIENNA,AUSTRIA

来源：

SURFACE AND INTERFACE ANALYSIS | 1988年 / 12卷 / 1-12期

关键词：

Films--Thickness Measurement - Semiconducting Silicon--Substrates - Spectroscopy; Electron; -; Sputtering;

D O I：

10.1002/sia.740120510

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin Si3N4 films were formed on Si wafers by sputter deposition. From the knowledge of sputter time and growth rate, depending on sputter parameters, film thicknesses were estimated. The growth rate was quantified by ellipsometry. All of the surface investigations were performed by XPS. The method of variable take-off angle was employed.

引用

页码：322 / 323

页数：2

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