ESTIMATION OF HEAT-TRANSFER IN SOI-MOSFETS

被引：53

作者：

BERGER, M ^{[1
]}

CHAI, ZQ ^{[1
]}

机构：

[1] FRAUNHOFER INST MICROELECTR CIRCUITS & SYST,W-4100 DUISBURG 1,GERMANY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 04期

关键词：

D O I：

10.1109/16.75217

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes and quantifies heat flow in MOSFET's built on SIMOX wafers. SOI structures are examined numerically to show the influence of connection lines and different materials on the heat transport. Correct boundary conditions for device simulation and analytical expressions for compact models are derived. Bulk and SOI technologies are compared.

引用

页码：871 / 875

页数：5

共 7 条

[1] HIGH-QUALITY SILICON-ON-INSULATOR SUBSTRATES BY IMPLANTED OXYGEN IONS [J].

BELZ, J ;

BURBACH, G ;

VOGT, H ;

PETERWEIDEMANN, J ;

ZIMMER, G .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4) :429-433

[2]

BELZ J, 1990, 4TH P INT S SIL INS

[3]

CONSTAPEL R, 1989, P NASECODE DUBL, V6

[4]

GRAY PR, 1977, ANAL DESIGN ANALOG I, P83

[5]

GRIGULL U, 1963, GRUNDGESETZE WAERMEU, P282

[6]

LENEEL O, 1990, ELECTRON LETT, V26, P74

[7] PHYSICAL ORIGIN OF NEGATIVE DIFFERENTIAL RESISTANCE IN SOI TRANSISTORS [J].

MCDAID, LJ ;

HALL, S ;

MELLOR, PH ;

ECCLESTON, W ;

ALDERMAN, JC .

ELECTRONICS LETTERS, 1989, 25 (13) :827-828

← 1 →