INGAAS AVALANCHE PHOTO-DIODE WITH INP P-N-JUNCTION

被引：41
作者：
KANBE, H
SUSA, N
NAKAGOME, H
ANDO, H
机构：
来源：
ELECTRONICS LETTERS | 1980年 / 16卷 / 05期
关键词：
D O I：
10.1049/el:19800117
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：163 / 165
页数：3
相关论文
共 11 条
[1]   CHARACTERISTICS OF GERMANIUM AVALANCHE PHOTO-DIODES IN WAVELENGTH REGION OF 1-1.6 MU-M [J].
ANDO, H ;
KANBE, H ;
KIMURA, T ;
YAMAOKA, T ;
KANEDA, T .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (11) :804-809
[2]   IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN INP [J].
ARMIENTO, CA ;
GROVES, SH ;
HURWITZ, CE .
APPLIED PHYSICS LETTERS, 1979, 35 (04) :333-335
[3]   INGAAS DETECTOR FOR 1.0-1.7-MUM WAVELENGTH RANGE [J].
BACHMANN, KJ ;
SHAY, JL .
APPLIED PHYSICS LETTERS, 1978, 32 (07) :446-448
[4]  
LEHENY RF, 1979, ELECTRON LETT, V15, P713, DOI 10.1049/el:19790507
[5]   ZN-DIFFUSED IN0.53GA0.47AS-INP AVALANCHE PHOTODETECTOR [J].
MATSUSHIMA, Y ;
SAKAI, K ;
AKIBA, S ;
YAMAMOTO, T .
APPLIED PHYSICS LETTERS, 1979, 35 (06) :466-468
[6]   MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].
MCINTYRE, RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+
[7]   ULTIMATE LOW-LOSS SINGLE-MODE FIBER AT 1.55 MU-M [J].
MIYA, T ;
TERUNUMA, Y ;
HOSAKA, T ;
MIYASHITA, T .
ELECTRONICS LETTERS, 1979, 15 (04) :106-108
[8]  
NUESE CJ, 1977, DEVICE RES C ITHACA, pV6
[9]   GA0.47IN0.53AS HOMOJUNCTION PHOTO-DIODE - NEW AVALANCHE PHOTODETECTOR IN NEAR-INFRARED BETWEEN 1.0 AND 1.6 MU-M [J].
PEARSALL, TP ;
PAPUCHON, M .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :640-642
[10]  
TAKANASHI Y, UNPUBLISHED
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