INFLUENCE OF ANNEALING ON RESISTIVITY PROFILE OF SILICON MONOCRYSTALS

被引：9

作者：

DANNHAUSER, F

KRAUSSE, J

MAYER, K

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 12期

关键词：

D O I：

10.1016/0038-1101(72)90133-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1383 / +

页数：1

共 11 条

[1]

Ciszek T. F., 1969, Semiconductor silicon, P156

[2] LIQUID-SOLID INTERFACE SHAPE OBSERVED IN SILICON CRYSTALS GROWN BY THE CZOCHRALSKI METHOD [J].

EDWARDS, WD .

CANADIAN JOURNAL OF PHYSICS, 1960, 38 (03) :439-443

[3] BULK DIFFUSION OF PHOSPHORUS IN SILICON IN HYDROGEN ATMOSPHERE [J].

GHOSHTAG.RN .

APPLIED PHYSICS LETTERS, 1970, 17 (04) :137-&

[4] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J].

GOETZBERGER, A ;

SCARLETT, RM ;

HAITZ, RH ;

MCDONALD, B .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1591-+

[5] A NEW STRIATION ETCH FOR SILICON [J].

KAMPER, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (02) :261-&

[6]

Kendall D. L., 1969, Semiconductor silicon, P358

[7]

KRAUSSE J, 1970, 2 DFG K BURGH

[8] RESISTIVITY INHOMOGENEITIES IN SILICON CRYSTALS [J].

MAZUR, RG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :255-&

[9]

MUHLBAUER A, 1965, Z NATURFORSCH PT A, VA 20, P1089

[10]

SIGMUND H, UNPUBLISHED

← 1 2 →