SELFPULSATION OPERATING REGIME FOR ABSORBER OF TWIN SECTION LASER DIODE

被引:16
作者
FARRELL, G
PHELAN, P
HEGARTY, J
机构
[1] Optronics Ireland Research Laboratories, Trinity College, Dublin
关键词
SEMICONDUCTOR LASERS; LASERS AND LASER APPLICATIONS;
D O I
10.1049/el:19910881
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The voltage-current characteristic of the absorber of a twin section laser diode is investigation as a function of the gain section current. For selfpulsation to occur the absorber must be operated within a specific region of the voltage-current characteristics. This region only exists for absorber voltage-current characteristics which contain an S-shaped negative resistance.
引用
收藏
页码:1403 / 1405
页数:3
相关论文
共 5 条
[1]  
BAOXUN D, 1989, IEEE J QUANTUM ELECT, V25, P847
[2]   BISTABILITY AND PULSATIONS IN SEMICONDUCTOR-LASERS WITH INHOMOGENEOUS CURRENT INJECTION [J].
HARDER, C ;
LAU, KY ;
YARIV, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (09) :1351-1361
[3]   OPTICAL RETIMING REGENERATOR USING 1.5-MU-M WAVELENGTH MULTIELECTRODE DFB LDS [J].
JINNO, M ;
MATSUMOTO, T .
ELECTRONICS LETTERS, 1989, 25 (20) :1332-1333
[4]   SPECIFIC NEGATIVE RESISTANCE IN SOLIDS [J].
RIDLEY, BK .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (530) :954-&
[5]   CONDITIONS FOR SELF-SUSTAINED PULSATION AND BISTABILITY IN SEMICONDUCTOR-LASERS [J].
UENO, M ;
LANG, R .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) :1689-1692