FIELD PROFILE IN GAAS LAYER BIASED ABOVE TRANSFERRED-ELECTRON THRESHOLD

被引：11
作者：
DEAN, RH
SCHWARTZ, PM
机构：
来源：
SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 04期
关键词：
D O I：
10.1016/0038-1101(72)90113-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：417 / +
页数：1
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