FIELD PROFILE IN GAAS LAYER BIASED ABOVE TRANSFERRED-ELECTRON THRESHOLD

被引：11

|

作者：

DEAN, RH

SCHWARTZ, PM

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 04期

关键词：

D O I：

10.1016/0038-1101(72)90113-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：417 / +

页数：1

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