INTERFACE CHARACTERISTICS OF OXIDE SEMICONDUCTOR ON SILICON HETEROJUNCTIONS

被引：0
作者：
KAR, S
GOBIS, L
DUBOW, J
机构：
[1] INDIAN INST TECHNOL,DEPT ELECT ENGN,KANPUR 208016,UTTAR PRADESH,INDIA
[2] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C370 / C370
页数：1
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