ANALYTICAL MODELS FOR ALGAAS/GAAS HETEROJUNCTION QUANTUM-WELLS

被引：23

作者：

KHONDKER, AN

ANWAR, AFM

机构：

[1] Clarkson Univ, Potsdam, NY, USA, Clarkson Univ, Potsdam, NY, USA

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 08期

关键词：

SEMICONDUCTOR DEVICES - Heterojunctions;

D O I：

10.1016/0038-1101(87)90011-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two kinds of approximate analytical model for Al//xGa//1// minus //xAs-GaAs heterojunction quantum wells, have been developed to describe the energy levels of electrons in them. The proposed models are based on the existing triangular well approximation; however, they take into account the finite heterojunction barrier height and acceptor doping level in GaAs. From a device modelling point of view, the present models provide attractive alternatives to describe the change control in MODFETs.

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收藏

页码：847 / 852

页数：6

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