BE-IMPLANTED (GAAL)AS STRIPE GEOMETRY LASERS

被引:17
作者
BARCHAIM, N
LANIR, M
MARGALIT, S
URY, I
WILT, D
YUST, M
YARIV, A
机构
关键词
D O I
10.1063/1.91457
中图分类号
O59 [应用物理学];
学科分类号
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页码:233 / 235
页数:3
相关论文
共 15 条
[1]   TRANSVERSE MODE STABILIZED ALX GA1-XAS INJECTION-LASERS WITH CHANNELED-SUBSTRATE-PLANAR STRUCTURE [J].
AIKI, K ;
NAKAMURA, M ;
KURODA, T ;
UMEDA, J ;
ITO, R ;
CHINONE, N ;
MAEDA, M .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (02) :89-94
[2]  
BARNOSKI MK, 1974, APPL PHYS LETT, V24, P627, DOI 10.1063/1.1655081
[3]   CONSTRICTED DOUBLE-HETEROSTRUCTURE (ALGA)AS DIODE-LASERS [J].
BOTEZ, D ;
ZORY, P .
APPLIED PHYSICS LETTERS, 1978, 32 (04) :261-263
[4]   UNIFORM-CARRIER-CONCENTRATION PARA-TYPE LAYERS IN GAAS PRODUCED BY BERYLLIUM ION-IMPLANTATION [J].
DONNELLY, JP ;
LEONBERGER, FJ ;
BOZLER, CO .
APPLIED PHYSICS LETTERS, 1976, 28 (12) :706-708
[5]   PROPERTIES OF BE-IMPLANTED PLANAR GAAS P-N-JUNCTIONS [J].
HELIX, MJ ;
VAIDYANATHAN, KV ;
STREETMAN, BG .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (04) :426-429
[6]   MG AND BE ION IMPLANTED GAAS [J].
HUNSPERGER, RG ;
JAMBA, DM ;
WILSON, RG .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1318-+
[7]  
JOHNSON WL, UNPUBLISHED
[8]   HORIZONTAL MODE DEFORMATION AND ANOMALOUS LASING PROPERTIES OF STRIPE GEOMETRY INJECTION-LASERS - EXPERIMENT [J].
KOBAYASHI, K ;
LANG, R ;
YONEZU, H ;
SAKUMA, I ;
HAYASHI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (01) :207-208
[9]   DIFFUSION STUDIES OF BE-IMPLANTED GAAS BY SIMS AND ELECTRICAL PROFILING [J].
MCLEVIGE, WV ;
VAIDYANATHAN, KV ;
STREETMAN, BG ;
COMAS, J ;
PLEW, L .
SOLID STATE COMMUNICATIONS, 1978, 25 (12) :1003-1008
[10]   ELECTRICAL PROFILING AND OPTICAL ACTIVATION STUDIES OF BE-IMPLANTED GAAS [J].
MCLEVIGE, WV ;
HELIX, MJ ;
VAIDYANATHAN, KV ;
STREETMAN, BG .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3342-3346