A 10GBIT/S OEIC PHOTORECEIVER USING INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：32

作者：

CHANDRASEKHAR, S ^{[1
]}

LUNARDI, LM ^{[1
]}

GNAUCK, AH ^{[1
]}

RITTER, D ^{[1
]}

HAMM, RA ^{[1
]}

PANISH, MB ^{[1
]}

QUA, GJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 05期

关键词：

OPTICAL RECEIVERS; OPTOELECTRONICS;

D O I：

10.1049/el:19920294

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal organic molecular beam epitaxy (MOMBE) was successfully used for the first time to realise a high speed monolithic photoreceiver. Incorporating an InGaAs pin photodetector followed by a transimpedance preamplifier circuit implemented with InP/InGaAs heterojunction bipolar transistors (HBTs), the OEIC photoreceiver had a bandwidth of 6 GHz and a midband transimpedance of 350-OMEGA. In a system experiment performed at 10 Gbit/s, the receiver exhibited a sensitivity of - 15.5 dBm for a bit error rate of 10(-9) at a wavelength of 1.53-mu-m. This is the first demonstration of operation of a long wavelength OEIC photoreceiver at this speed.

引用

页码：466 / 468

页数：3

共 7 条

[1] 4 GBIT/S PIN/HBT MONOLITHIC PHOTORECEIVER [J].