LATTICE-MATCHED SC1-XERXAS/GAAS HETEROSTRUCTURES - A DEMONSTRATION OF NEW SYSTEMS FOR FABRICATING LATTICE-MATCHED METALLIC COMPOUNDS TO SEMICONDUCTORS

被引：67
作者：
PALMSTROM, CJ
MOUNIER, S
FINSTAD, TG
MICELI, PF
机构：
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 04期
关键词：
D O I：
10.1063/1.102792
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Successful growth of lattice-matched Sc1-xErxAs layers buried in GaAs with a room-temperature resistivity of ∼50 μΩ cm demonstrates the feasibility of fabricating heterostructures of lattice-matched rare-earth monopnictides and monochalcogenides in semiconductors. Reflection high-energy electron diffraction oscillations during ScAs, ErAs, and Sc1-xErxAs growth indicate monolayer-by-monolayer growth.
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页码：382 / 384
页数：3
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