SURFACE CORE-LEVEL SHIFTS OF INAS(110)

被引：19
|
作者：
ANDERSEN, JN [1 ]
KARLSSON, UO [1 ]
机构：
[1] UNIV LUND,MAXLAB,S-22100 LUND,SWEDEN
来源：
PHYSICAL REVIEW B | 1990年 / 41卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.41.3844
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The surface core-level shift of the As 3d and the In 4d levels on the (110) cleavage surface of InAs has been measured. The presence of the surface is found to lower the As 3d binding energy by 30020 meV and to increase the In 4d binding energy by 27040 meV relative to the binding energies of the respective bulk levels. © 1990 The American Physical Society.
引用
收藏
页码：3844 / 3846
页数：3
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