INGAASP-INP DOUBLE-HETEROSTRUCTURE PHOTO-DIODES

被引：13

作者：

SAKAI, S

UMENO, M

AMEMIYA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 09期

关键词：

D O I：

10.1143/JJAP.17.1701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1701 / 1702

页数：2

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共 7 条

[1] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].

ASTLES, MG ;

SMITH, FGH ;

WILLIAMS, EW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) :1750-1757

[2] VARIATION OF MINORITY-CARRIER DIFFUSION LENGTH WITH CARRIER CONCENTRATION IN GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].

CASEY, HC ;

MILLER, BI ;

PINKAS, E .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1281-1287

[3] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J].

HSIEH, JJ .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :283-285

[4] CARRIER LIFETIME MEASUREMENT OF GAINASP/INP DOUBLE-HETEROSTRUCTURE LASERS [J].

ITAYA, Y ;

SUEMATSU, Y ;

IGA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (06) :1057-1058

[5] 1500-H CONTINUOUS CW OPERATION OF DOUBLE-HETEROSTRUCTURE GALNASP-INP LASERS [J].

SHEN, CC ;

HSIEH, JJ ;

LIND, TA .

APPLIED PHYSICS LETTERS, 1977, 30 (07) :353-354

[6] INXGA1-XASYP1-Y-INP HETEROJUNCTION PHOTODIODES [J].

WIEDER, HH ;

CLAWSON, AR ;

MCWILLIAMS, GE .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :468-470

[7]

YAMAMOTO T, 1977, TECHNICAL DIGEST C L, P2