REACTIVE ION ETCHING OF DIELECTRIC AND SEMICONDUCTOR LAYERS IN CHF3 AND C2F6

[1] BOLLINGER D, 1984, SOLID STATE TECHNOL, V27, P167

[2] BRUCE RH, 1981, SOLID STATE TECHNOL, V24, P64

[3] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[4] PROFILE CONTROL BY REACTIVE SPUTTER ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 319 - 326

[5] REACTIVE ION ETCHING OF SILICON DIOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1152 - 1154

[6] MELLIARSMITH CM, 1978, THIN FILM PROCESSES, P497

[7] NOVOTNY Z, IN PRESS TESLA ELECT

[1] BOLLINGER D, 1984, SOLID STATE TECHNOL, V27, P167

[2] BRUCE RH, 1981, SOLID STATE TECHNOL, V24, P64

[3] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : 1419 - 1421

[4] PROFILE CONTROL BY REACTIVE SPUTTER ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 319 - 326

[5] REACTIVE ION ETCHING OF SILICON DIOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) : 1152 - 1154

[6] MELLIARSMITH CM, 1978, THIN FILM PROCESSES, P497

[7] NOVOTNY Z, IN PRESS TESLA ELECT