VISUALIZATION OF ELECTRICAL INHOMOGENEITIES IN SEMIINSULATING GALLIUM-ARSENIDE

被引：0

作者：

LEBEDEVA, NN

ORBUKH, VI

ZEINALLY, AK

机构：

来源：

SEMICONDUCTORS | 1993年 / 27卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A new method for visualization of the distribution of the electrical conductivity and photosensitivity of high-resistivity (rho greater-than-or-equal-to 10(6) OMEGA . cm) semiconductors was developed. A photoionization system with a planar gas-discharge cell was employed and the investigated semiconductor was placed in a gas-discharge gap between two transparent metal electrodes. Electrical inhomogeneities in the semiconductor were visualized in the gas-discharge radiation and on the surface of the semiconductor facing the cathode. A comparison of the images obtained in this way with the pattern formed by chemical etching of a semiconductor surface lead to the conclusion that the distribution of dislocations could be made visible in this way. The effect of the structure of inhomogeneities on the resolution of the method has been analyzed.

引用

页码：625 / 627

页数：3

共 11 条

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