FOCUSED ION-BEAM DIRECT DEPOSITION OF GOLD

被引：32

作者：

NAGAMACHI, S ^{[1
]}

YAMAKAGE, Y ^{[1
]}

MARUNO, H ^{[1
]}

UEDA, M ^{[1
]}

SUGIMOTO, S ^{[1
]}

ASARI, M ^{[1
]}

ISHIKAWA, J ^{[1
]}

机构：

[1] KYOTO UNIV,DEPT ELECTR,SAKYO KU,KYOTO 60601,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 17期

关键词：

D O I：

10.1063/1.109453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Focused ion beam direct deposition has been developed as a new technique for making patterned metal film directly on substrates. The 20 keV Au+ ion beam is focused, deflected, and finally decelerated to 30-200 eV between the objective lens and substrate. The decelerated beam is deposited on the substrate at room temperature. The beam diameter can be tuned between 0.5 and 8 mum and the beam current varies from 40 pA to 10 nA, corresponding to the beam diameter. Current density was about 20 mA/cm2, so that the deposition rate in the beam spot was estimated about 0.02 mum/s. The purity of gold film was measured with Auger electron spectroscopy and contents of carbon and oxygen, undesirable impurities, were below detection limits. The resistivity was constant at 3.7 +/- 0.1 muOMEGA cm for deposition over the ion energy range of 34-194 eV.

引用

页码：2143 / 2145

页数：3

共 7 条

[1] FOCUSED ION-BEAM INDUCED DEPOSITION OF LOW-RESISTIVITY GOLD-FILMS [J].