ON STUDY OF FINE STRUCTURE IN TUNNEL JUNCTIONS

被引：2
作者：
SHEPHERD, FD
YANG, AC
VICKERS, VE
KING, TR
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 02期
关键词：
D O I：
10.1109/PROC.1965.3600
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：175 / &
相关论文
共 5 条
[1]   A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS [J].
ESAKI, L ;
MIYAHARA, Y .
SOLID-STATE ELECTRONICS, 1960, 1 (01) :13-&
[2]  
HALL RN, 1961, P INT C SEMICONDUCTO, P193
[3]   DIRECT OBSERVATION OF PHONONS DURING TUNNELING IN NARROW JUNCTION DIODES [J].
HOLONYAK, N ;
LESK, IA ;
HALL, RN ;
TIEMANN, JJ ;
EHRENREICH, H .
PHYSICAL REVIEW LETTERS, 1959, 3 (04) :167-168
[4]   THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J].
KANE, EO .
PHYSICAL REVIEW, 1963, 131 (01) :79-&
[5]  
SHEPHERD FD, TO BE PUBLISHED
1