G-FACTOR FOR ELECTRONS IN N-TYPE SILICON SURFACE INVERSION LAYERS

被引：10

作者：

NARITA, K ^{[1
]}

TAKAOKA, S ^{[1
]}

KOMATSUB.KF ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1973年 / 12卷 / 11期

关键词：

D O I：

10.1016/0038-1098(73)90147-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1221 / 1224

页数：4

共 11 条

[1] EFFECTS OF A TILTED MAGNETIC FIELD ON A 2-DIMENSIONAL ELECTRON GAS [J].

FANG, FF ;

STILES, PJ .

PHYSICAL REVIEW, 1968, 174 (03) :823-&

[2]

HOWARD WM, UNPUBLISHED

[3] G FACTOR OF 2-DIMENSIONAL INTERACTING ELECTRON GAS [J].

JANAK, JF .

PHYSICAL REVIEW, 1969, 178 (03) :1416-&

[4]

KOBAYASHI M, TO BE PUBLISHED

[5]

KOMATSUBARA KF, UNPUBLISHED

[6]

MAEDA H, UNPUBLISHED

[7]

NARITA K, TO BE PUBLISHED

[8] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J].

STERN, F .

PHYSICAL REVIEW B, 1972, 5 (12) :4891-&

[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

STERN, F ;

HOWARD, WE .

PHYSICAL REVIEW, 1967, 163 (03) :816-&

[10] TRANSVERSE HALL EFFECT IN ELECTRIC QUANTUM LIMIT [J].

STERN, F .

PHYSICAL REVIEW LETTERS, 1968, 21 (25) :1687-&

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