PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF ORGANOSILICON THIN-FILMS FROM TETRAETHOXYSILANE-OXYGEN FEEDS

被引：86
作者：
FRACASSI, F
DAGOSTINO, R
FAVIA, P
机构：
[1] Dipartimento di Chimica, Università di Bari
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1992年 / 139卷 / 09期
关键词：
D O I：
10.1149/1.2221277
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The composition of films deposited in RF glow discharges fed with tetraethoxysilane and oxygen mixtures has been investigated by means of in situ x-ray photoelectron spectroscopy and infrared spectroscopy. These results, combined with mass spectrometric investigations of the gas phase, indicate that the overall deposition consists of several concurrent heterogeneous and homogeneous reactions.
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页码：2636 / 2644
页数：9
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