MATERIALS OF CONSTRUCTION FOR SILICON CRYSTAL-GROWTH

被引：12

作者：

LEIPOLD, MH

ODONNELL, TP

HAGAN, MA

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 50卷 / 01期

关键词：

D O I：

10.1016/0022-0248(80)90260-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：366 / 377

页数：12

共 50 条

[1] SILICON CRYSTAL-GROWTH IN VACUUM
KHATTAK, CP
SCHMID, F
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C114 - C114
[2] CRYSTAL-GROWTH OF HTSC MATERIALS
ASSMUS, W
SCHMIDBAUER, W
SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 1993, 6 (08): : 555 - 566
[3] DEVELOPMENTS IN CZOCHRALSKI SILICON CRYSTAL-GROWTH
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FREDERICK, RA
SOLID STATE TECHNOLOGY, 1983, 26 (08) : 221 - 225
[4] STATUS AND FUTURE OF SILICON CRYSTAL-GROWTH
ZULEHNER, W
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[5] CZOCHRALSKI SILICON CRYSTAL-GROWTH AND CHARACTERIZATION
DAIDO, K
SHINOYAMA, S
INOUE, N
REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1979, 27 (1-2): : 33 - 40
[6] CHARACTERISTICS OF PROFILED SILICON CRYSTAL-GROWTH, USING THE SHAPERS FROM VARIOUS MATERIALS
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ZATULOVSKII, LM
EGOROV, LP
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IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1979, 43 (09): : 1985 - 1988
[7] TECHNIQUES FOR THE CRYSTAL-GROWTH OF SILICON INGOTS AND RIBBONS
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JOURNAL OF CRYSTAL GROWTH, 1984, 66 (03) : 655 - 672
[8] SPECTROSCOPY OF CRYSTAL-GROWTH SURFACE INTERMEDIATES ON SILICON
CHESTERS, MA
HORN, AB
KELLAR, EJC
PARKER, SF
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[9] SHAPED CRYSTAL-GROWTH OF SILICON FOILS BY RAFT
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GEISSLER, J
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WAHLICH, R
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[10] SILICON CRYSTAL-GROWTH TECHNOLOGY FOR SUBMICRON DEVICES
FIEGL, GF
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : C111 - C112

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