LOW-FREQUENCY LOW-NOISE TRANSISTORS FABRICATED BY DOUBLE ION-IMPLANTATION

被引：1
作者：
YAGI, K [1 ]
TAMURA, M [1 ]
YANAGI, Y [1 ]
INANIWA, K [1 ]
TOKUYAMA, T [1 ]
机构：
[1] HITACHI LTD,TAKASAKI WORKS,TAKASAKI 37011,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷
关键词：
D O I：
10.7567/JJAPS.19S1.61
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：61 / 64
页数：4
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