LOW-FREQUENCY LOW-NOISE TRANSISTORS FABRICATED BY DOUBLE ION-IMPLANTATION

被引:1
作者
YAGI, K [1 ]
TAMURA, M [1 ]
YANAGI, Y [1 ]
INANIWA, K [1 ]
TOKUYAMA, T [1 ]
机构
[1] HITACHI LTD,TAKASAKI WORKS,TAKASAKI 37011,JAPAN
关键词
D O I
10.7567/JJAPS.19S1.61
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:61 / 64
页数:4
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