LOW-FREQUENCY LOW-NOISE TRANSISTORS FABRICATED BY DOUBLE ION-IMPLANTATION

被引：1

作者：

YAGI, K ^{[1
]}

TAMURA, M ^{[1
]}

YANAGI, Y ^{[1
]}

INANIWA, K ^{[1
]}

TOKUYAMA, T ^{[1
]}

机构：

[1] HITACHI LTD,TAKASAKI WORKS,TAKASAKI 37011,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S1.61

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：61 / 64

页数：4

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