X-RAY PHOTOELECTRON-SPECTROSCOPY OF SIO2-SI INTERFACIAL REGIONS - ULTRATHIN OXIDE-FILMS

被引：123

作者：

RAIDER, SI ^{[1
]}

FLITSCH, R ^{[1
]}

机构：

[1] IBM,SYST PROD DIV LAB,HOPEWELL JUNCTION,NY 12533

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1978年 / 22卷 / 03期

关键词：

D O I：

10.1147/rd.223.0294

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：294 / 303

页数：10

共 29 条

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[8] ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON [J].

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[10] LOW-ENERGY ION-SCATTERING SPECTROMETRY (ISS) OF SIO2-SI INTERFACE [J].

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