CHARACTERIZATION OF P-TYPE GAAS HEAVILY DOPED WITH CARBON GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：142
作者：
SAITO, K
TOKUMITSU, E
AKATSUKA, T
MIYAUCHI, M
YAMADA, T
KONAGAI, M
TAKAHASHI, K
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 08期
关键词：
D O I：
10.1063/1.341356
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：3975 / 3979
页数：5
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