SI 2P CORE-LEVEL CHEMICAL-SHIFTS AT THE H/SI(111)-(1X1) SURFACE

被引：23

作者：

BLASE, X

DASILVA, AJR

ZHU, XJ

LOUIE, SG

机构：

[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.50.8102

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We calculate the core-level shift of the Si 2p levels for atoms near the H/Si(111)-(1x1) surface. We show that a simple first-order perturbation theory using pseudopotentials and the local-density approximation gives good results for the photoemission spectra of the core electrons. The electric-dipole matrix elements for the levels are also calculated. The results are in good agreement with a recent high-resolution angle-resolved photoemission-spectroscopy measurement and allow us to interpret some previously unexplained experimental peaks.

引用

收藏

页码：8102 / 8105

页数：4

相关论文

共 9 条

[1] SELF-ENERGY EFFECTS ON THE SURFACE-STATE ENERGIES OF H-SI(111)1X1 [J].

BLASE, X ;

ZHU, XJ ;

LOUIE, SG .

PHYSICAL REVIEW B, 1994, 49 (07) :4973-4980

[2] COUPLING OF AN ADSORBATE VIBRATION TO A SUBSTRATE SURFACE PHONON - H ON SI(111) [J].

DUMAS, P ;

CHABAL, YJ ;

HIGASHI, GS .

PHYSICAL REVIEW LETTERS, 1990, 65 (09) :1124-1127

[3] COMPARISON OF SI(111) SURFACES PREPARED USING AQUEOUS-SOLUTIONS OF NH4F VERSUS HF [J].

HIGASHI, GS ;

BECKER, RS ;

CHABAL, YJ ;

BECKER, AJ .

APPLIED PHYSICS LETTERS, 1991, 58 (15) :1656-1658

[4] IDEAL HYDROGEN TERMINATION OF THE SI-(111) SURFACE [J].

HIGASHI, GS ;

CHABAL, YJ ;

TRUCKS, GW ;

RAGHAVACHARI, K .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :656-658

[5] ELECTRONIC-STRUCTURE AND ITS DEPENDENCE ON LOCAL ORDER FOR H/SI(111)-(1X1) SURFACES [J].

HRICOVINI, K ;

GUNTHER, R ;

THIRY, P ;

TALEBIBRAHIMI, A ;

INDLEKOFER, G ;

BONNET, JE ;

DUMAS, P ;

PETROFF, Y ;

BLASE, X ;

ZHU, XJ ;

LOUIE, SG ;

CHABAL, YJ ;

THIRY, PA .

PHYSICAL REVIEW LETTERS, 1993, 70 (13) :1992-1995

[6] EFFECT OF ANISOTROPIC COULOMB FIELD ON SI 2P CORE LEVELS IN OXIDIZED SILICON [J].

MIYAMOTO, Y ;

OSHIYAMA, A .

PHYSICAL REVIEW B, 1991, 44 (11) :5931-5934

[7] CORE-LEVEL SHIFTS FROM DENSITY-FUNCTIONAL COMPUTATIONS [J].

PEDOCCHI, L ;

RUSSO, N ;

SALAHUB, DR .

PHYSICAL REVIEW B, 1993, 47 (19) :12992-12994

[8] EVIDENCE FOR SITE-SENSITIVE SCREENING OF CORE HOLES AT THE SI AND GE (001) SURFACE [J].

PEHLKE, E ;

SCHEFFLER, M .

PHYSICAL REVIEW LETTERS, 1993, 71 (14) :2338-2341

[9]

TALEBIBRAHIMI A, UNPUB