OBSERVATION OF A PERSISTENT NEGATIVE PHOTOCONDUCTIVITY EFFECT IN ALGAAS GAAS MODULATION-DOPED STRUCTURES

被引：16

作者：

POWELL, AL ^{[1
]}

BUTTON, CC ^{[1
]}

ROBERTS, JS ^{[1
]}

ROCKETT, PI ^{[1
]}

GRIMMEISS, HG ^{[1
]}

PETTERSSON, H ^{[1
]}

机构：

[1] UNIV LUND,DEPT SOLID STATE PHYS,S-22100 LUND,SWEDEN

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.67.3010

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the observation of a persistent "negative" photoconductivity effect exhibited in AlxGa1-xAs/GaAs heterostructures over the temperature range 170 < T < 300 K. We believe this to be the first observation of persistent "negative" photoconductivity, particularly at these relatively high temperatures. A possible source of the phenomenon is discussed, and suggested to originate from an interaction between the two-dimensional electron gas and EL2 centers.

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页码：3010 / 3013

页数：4

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