DIRECT OBSERVATION OF THE SILICON-NITRIDE ON AMORPHOUS-SILICON INTERFACE STATES

被引：16

作者：

GELATOS, AV

KANICKI, J

机构：

[1] IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.103271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the investigation of the silicon nitride/hydrogenated amorphous silicon interface by capacitance measurements. We observe that the "slow" interface states are located inside the silicon nitride layer, while the energy distribution of the "fast" interface states is peaked at 0.7 eV below the hydrogenated amorphous silicon conduction band with an integrated value of 2×1011 cm-2.

引用

页码：940 / 942

页数：3

共 17 条

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