METALLIZATION AND CRYSTALLIZATION OF SEMICONDUCTING AMORPHOUS GA20TE80 ALLOY UNDER HIGH-PRESSURE

被引：6

作者：

PARTHASARATHY, G ^{[1
]}

ASOKAN, S ^{[1
]}

TITUS, SSK ^{[1
]}

KRISHNA, RR ^{[1
]}

机构：

[1] INDIAN INST SCI,INSTRUMENTAT & SERV UNIT,BANGALORE 560012,KARNATAKA,INDIA

来源：

PHYSICS LETTERS A | 1988年 / 131卷 / 7-8期

关键词：

D O I：

10.1016/0375-9601(88)90297-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：441 / 444

页数：4

共 25 条

[1]

Andreev A. A., 1979, Soviet Journal of Glass Physics and Chemistry, V5, P334

[2]

Besson J. M., 1975, High Temperatures - High Pressures, V7, P710

[3] OPTICAL-ABSORPTION EDGE IN GASE UNDER HYDROSTATIC-PRESSURE [J].

BESSON, JM ;

JAIN, KP ;

KUHN, A .

PHYSICAL REVIEW LETTERS, 1974, 32 (17) :936-939

[4] MORPHOLOGICAL STRUCTURE OF BISMUTH-DOPED N-TYPE AMORPHOUS-GERMANIUM SULFIDE SEMICONDUCTORS [J].

BHATIA, KL ;

GOSAIN, DP ;

PARTHASARATHY, G ;

GOPAL, ESR .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1986, 5 (12) :1281-1284

[5] ON THE STRUCTURAL FEATURES OF DOPED AMORPHOUS-CHALCOGENIDE SEMICONDUCTORS [J].

BHATIA, KL ;

GOSAIN, DP ;

PARTHASARATHY, G ;

GOPAL, ESR .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1986, 86 (1-2) :65-71

[6] BISMUTH-DOPED AMORPHOUS-GERMANIUM SULFIDE SEMICONDUCTORS [J].

BHATIA, KL ;

GOSAIN, DP ;

PARTHASARATHY, G ;

GOPAL, ESR .

PHYSICAL REVIEW B, 1986, 34 (12) :8786-8793

[7]

Bose D. N., 1982, Materials Letters, V1, P61, DOI 10.1016/0167-577X(82)90007-6

[8] CRYSTAL-STRUCTURE OF A NEW HIGH-PRESSURE POLYMORPH OF GAS [J].

DAMOUR, H ;

HOLZAPFEL, WB ;

POLIAN, A ;

CHEVY, A .

SOLID STATE COMMUNICATIONS, 1982, 44 (06) :853-855

[9] IMPURITY STATES IN SB-DOPED AMORPHOUS-SEMICONDUCTORS [J].

GOSAIN, DP ;

BHATIA, KL ;

PARTHASARATHY, G ;

GOPAL, ESR .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) :2313-2319

[10] PRESSURE-INDUCED STRUCTURAL TRANSFORMATIONS IN BI-DOPED AMORPHOUS-GERMANIUM SULFIDE [J].

GOSAIN, DP ;

BHATIA, KL ;

PARTHASARATHY, G ;

GOPAL, ESR .

PHYSICAL REVIEW B, 1985, 32 (04) :2727-2730

← 1 2 3 →