OHMIC CONTACTS TO N-GAAS USING IN/PD METALLIZATION

被引：42

作者：

ALLEN, LH

HUNG, LS

KAVANAGH, KL

PHILLIPS, JR

YU, AJ

MAYER, JW

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 05期

关键词：

D O I：

10.1063/1.98429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：326 / 327

页数：2

共 10 条

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[3] PD-GE CONTACTS TO N-TYPE GAAS [J].

GRINOLDS, HR ;

ROBINSON, GY .

SOLID-STATE ELECTRONICS, 1980, 23 (09) :973-&

[4] THE ROLE OF COMPOUND FORMATION AND HETEROEPITAXY IN INDIUM-BASED OHMIC CONTACTS TO GAAS [J].

LAKHANI, AA .

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[5] NONALLOYED OHMIC CONTACTS TO N-GAAS BY SOLID-PHASE EPITAXY OF GE [J].

MARSHALL, ED ;

ZHANG, B ;

WANG, LC ;

JIAO, PF ;

CHEN, WX ;

SAWADA, T ;

LAU, SS ;

KAVANAGH, KL ;

KUECH, TF .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :942-947

[6] IN/PT OHMIC CONTACTS TO GAAS [J].

MARVIN, DC ;

IVES, NA ;

LEUNG, MS .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2659-2661

[7]

PALMSTROM CJ, 1985, GALLIUM ARSENIDE MAT, pCH6

[8]

SANDS T, 1986, J MATER RES SOC S P, V54, P367

[9]

WOODALL JM, 1981, J VAC SCI TECHNOL, V19, P636

[10] INSITU CONTACTS TO GAAS BASED ON INAS [J].

WRIGHT, SL ;

MARKS, RF ;

TIWARI, S ;

JACKSON, TN ;

BARATTE, H .

APPLIED PHYSICS LETTERS, 1986, 49 (22) :1545-1547

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