LATERAL GROWTH OF POLY-SI FILM BY EXCIMER-LASER AND ITS THIN-FILM-TRANSISTOR APPLICATION

被引：31

作者：

CHOI, DH

SADAYUKI, E

SUGIURA, O

MATSUMURA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Oh-okayama Meguro-ku, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1A期

关键词：

EXCIMER LASER CRYSTALLIZATION METHOD; SOLIDIFICATION RATE; LATERAL GROWTH; ULTRA-LARGE GRAIN; POLYSILICON; THIN FILM TRANSISTOR; MEMBRANE;

D O I：

10.1143/JJAP.33.70

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin Si film on a SiO2 membrane has been recrystallized by single-shot excimer laser. Since there is no substrate acting as a heat sink to the latent heat in the molten Si film, the heat flow can be reduced immensely and also controlled well to form a temperature gradient along the membrane, resulting in the lateral growth of large grains, more than 70 mu m in length and a few mu m in width. Two thin film transistors (TFTs) with the channels parallel and perpendicular to the grain boundary, were fabricated using the laterally grown poly-Si film. The parallel TFT showed the maximum field-effect mobilities of more than 600 cm(2)/Vs for electrons and about 300. cm(2)/Vs for holes.

引用

页码：70 / 74

页数：5

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