IMAGING THE SURFACES OF NANOPOROUS SEMICONDUCTORS BY ATOMIC-FORCE MICROSCOPY

被引：26
|
作者：
ENZEL, P
HENDERSON, GS
OZIN, GA
BEDARD, RL
机构：
[1] UNIV TORONTO,DEPT GEOL,TORONTO,ON M5S 3B1,CANADA
[2] UOP TARRYTOWN TECH CTR,TARRYTOWN,NY 10591
来源：
ADVANCED MATERIALS | 1995年 / 7卷 / 01期
关键词：
D O I：
10.1002/adma.19950070115
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Communication: Open framework semiconductors (tin(IV) sulfides and tin(IV) selenides) exhibiting bulk crystalline nanoporosity have been studied using atomic force microscopy (AFM). The bulk porosity is reflected in the surface structures of these materials (see Fig.), and little reconstruction can be detected, important points in the assessment of the electrical transport characteristics of this new class of nanoporous materials.
引用
收藏
页码：64 / 68
页数：5
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