HIGH-SPEED MOS MEMORY

被引：0

作者：

IEDA, N

YOSHIMURA, H

ASAOKA, T

机构：

[1] NIPPON TELEG & TEL PUBL CORP, RES DEV BUR, MUSASHINO, JAPAN

[2] ELECT COMMUN LAB, PLANNING & COORDINATION OFF, MUSASHINO, JAPAN

[3] ELECT COMMUN LAB, INTEGRATED ELECTR DEV DIV, SOLID STATE EQUIPMENT SECT, MUSASCHINO, JAPAN

来源：

REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES | 1973年 / 21卷 / 7-8期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：473 / 481

页数：9

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