THE FORMATION OF SILICIDES FROM THIN-FILMS OF SOME RARE-EARTH-METALS

被引：128

作者：

BAGLIN, JE

HEURLE, FMD

PETERSSON, CS

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 07期

关键词：

D O I：

10.1063/1.91559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：594 / 596

页数：3

共 28 条

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[2] FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE [J].

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[3] FORMATION OF SILICIDES IN MO-W BILAYER FILMS ON SI SUBSTRATES - MARKER EXPERIMENT [J].

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SERRANO, C .

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[4] INTERFACE-MARKER TECHNIQUE APPLIED TO THE STUDY OF METAL SILICIDE GROWTH [J].

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[5]

BOULESTEIX C, 1971, 9TH P RAR EARTH RES, V1, P379

[6]

BOWER RW, 1973, SOLID STATE ELECTRON, V16, P1461, DOI 10.1016/0038-1101(73)90063-4

[7]

COE DJ, 1974, METAL SEMICONDUCTOR, P74

[8]

ELLIOTT RP, 1965, CONSTITUTION BINARY, P823

[9] REACTION-KINETICS OF MOLYBDENUM THIN-FILMS ON SILICON(111) SURFACE [J].

GUIVARCH, A ;

AUVRAY, P ;

BERTHOU, L ;

LECUN, M ;

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HENOC, P ;

PELOUS, G ;

MARTINEZ, A .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) :233-237

[10] VALENCE FLUCTUATIONS OF YTTERBIUM IN SILICON-RICH COMPOUNDS [J].

IANDELLI, A ;

PALENZONA, A ;

OLCESE, GL .

JOURNAL OF THE LESS-COMMON METALS, 1979, 64 (02) :213-220

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