LARGE SIGNAL ANALYSIS OF ABRUPT JUNCTION SILICON IMPATT DIODES

[11] SCHARFETTER DL, 1969, IEEE T ELECTRON DEVI, VED16, P64

[12] IMPATT OSCILLATOR PERFORMANCE IMPROVEMENT WITH SECOND-HARMONIC TUNING [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09): : 1616 - &

[13] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (05) : 111 - &

[14] HIGH-EFFICIENCY CONTINUOUS OSCILLATIONS IN SILICON IMPATT DIODES BELOW TRANSIT-TIME FREQUENCY [J]. ELECTRONICS LETTERS, 1969, 5 (11) : 229 - &

[11] SCHARFETTER DL, 1969, IEEE T ELECTRON DEVI, VED16, P64

[12] IMPATT OSCILLATOR PERFORMANCE IMPROVEMENT WITH SECOND-HARMONIC TUNING [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09): : 1616 - &

[13] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (05) : 111 - &

[14] HIGH-EFFICIENCY CONTINUOUS OSCILLATIONS IN SILICON IMPATT DIODES BELOW TRANSIT-TIME FREQUENCY [J]. ELECTRONICS LETTERS, 1969, 5 (11) : 229 - &