LARGE SIGNAL ANALYSIS OF ABRUPT JUNCTION SILICON IMPATT DIODES

被引：1

作者：

THOMSON, I

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1972年 / 32卷 / 02期

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D O I：

10.1080/00207217208938277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

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页码：121 / &

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