DEFECT DENSITY VARIATION WITH DEPOSITION RATE IN SNSB THIN-FILMS FROM ANNEALING STUDY OF ELECTRICAL-RESISTANCE

被引：0

作者：

DAS, VD ^{[1
]}

JAGADEESH, MS ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT PHYS,THIN FILM LAB,MADRAS 600036,INDIA

来源：

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D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：167 / 174

页数：8

共 30 条

[11] MATHEWS JW, 1967, PHYSICS THIN FILMS, V4
[12] MATHEWS JW, 1959, PHILOS MAG, V4, P1017
[13] MATHEWS JW, 1962, PHIL MAG, V7, P915
[14] ELECTRICAL RESISTIVITY STUDY OF LATTICE DEFECTS INTRODUCED IN COPPER BY 1.25-MEV ELECTRON IRRADIATION AT 80-DEGREES-K
MEECHAN, CJ
BRINKMAN, JA
[J]. PHYSICAL REVIEW, 1956, 103 (05): : 1193 - 1202
[15] THE STUDY OF EPITAXY IN THIN SURFACE FILMS
PASHLEY, DW
[J]. ADVANCES IN PHYSICS, 1956, 5 (18) : 173 - +
[16] PATEL AR, 1972, THIN SOLID FILMS, V9, P181, DOI 10.1016/0040-6090(72)90249-0
[17] KINETICS OF PROCESSES DISTRIBUTED IN ACTIVATION ENERGY
PRIMAK, W
[J]. PHYSICAL REVIEW, 1955, 100 (06): : 1677 - 1689
[18] SHAH VV, 1965, INDIAN J PURE AP PHY, V3, P20
[19] ELECTRONIC INTERACTION BETWEEN METALLIC CATALYSTS AND CHEMISORBED MOLECULES
SUHRMANN, R
[J]. ADVANCES IN CATALYSIS, 1955, 7 : 303 - 352
[20] SUHRMANN R, 1960, ADV CATAL, V9, P258