GROWTH, CHARACTERIZATION, AND MODELING OF TERNARY INGAAS-GAAS QUANTUM-WELLS BY SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：28

作者：

JONES, AM ^{[1
]}

OSOWSKI, ML ^{[1
]}

LAMMERT, RM ^{[1
]}

DANTZIG, JA ^{[1
]}

COLEMAN, JJ ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT MECH & IND ENGN,URBANA,IL 61801

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 11期

关键词：

INGAAS; METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); QUANTUM WELLS;

D O I：

10.1007/BF02676823

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A computational diffusion model is used to predict thickness and composition profiles of ternary InxGa1-xAs quantum wells grown by selective-area, atmospheric pressure metalorganic chemical vapor deposition (MOCVD), and its accuracy is investigated. The model utilizes diffusion equations and boundary conditions derived from basic MOCVD theory, with reaction parameters derived from experimental results, to predict the concentration of each column III constituent throughout the concentration boundary layer. Solutions to these equations are found using the two-dimensional, finite element method. The growth thickness profiles of GaAs, InP, and InxGa1-xAs deposited by selective-area MOCVD are observed by conventional profilometry, and compositions are measured indirectly by laser emission wavelengths. The data presented show that the model accurately predicts growth thickness and composition profiles of ternary III-V materials grown by selective-area MOCVD.

引用

页码：1631 / 1636

页数：6

共 30 条

[11] INSITU DEFINITION OF SEMICONDUCTOR STRUCTURES BY SELECTIVE AREA GROWTH AND ETCHING [J].