CHARACTERIZATION OF LOW-ENERGY ION-INDUCED DAMAGE USING THE MULTIPLE-QUANTUM-WELL PROBE TECHNIQUE WITH AN INTERVENING SUPERLATTICE

被引:28
作者
GREEN, DL
HU, EL
PETROFF, PM
LIBERMAN, V
NOONEY, M
MARTIN, R
机构
[1] UNIV CALIF SANTA BARBARA,DEPT CHEM,SANTA BARBARA,CA 93106
[2] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 06期
关键词
D O I
10.1116/1.586466
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Observations of low energy ion-induced damage of III-V semiconductor materials indicate that the ion damage penetrates much more deeply than simple projected ion range theory would suggest. Our present experiments are aimed to investigate two proposed mechanisms of this low energy, long range ion-induced damage: namely, (1) ion channeling and (2) defect generation and diffusion. Accordingly, we have designed a set of well-controlled ion exposure experiments based on the multiple quantum well (MQW) probe technique. Our experimental approach incorporates both the use of structural variations of our MQW probe structures and Ar ion beam parameter variations. An intervening superlattice placed in the surface barrier region of one of our MQW probe structures is effective in reducing observed defects. Bombardment carried out at a variety of substrate temperatures (78 K, room temperature, and 150-degrees-C) reveal decreased damage profiles at the lowest temperature.
引用
收藏
页码:2249 / 2253
页数:5
相关论文
共 11 条
  • [1] ELECTRICAL CHARACTERISTICS OF AR-ION SPUTTER INDUCED DEFECTS IN EPITAXIALLY GROWN N-GAAS
    AURET, FD
    GOODMAN, SA
    MYBURG, G
    MEYER, WE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 2366 - 2370
  • [2] NONRADIATIVE DAMAGE MEASURED BY CATHODOLUMINESCENCE IN ETCHED MULTIPLE QUANTUM WELL GAAS/ALGAAS QUANTUM DOTS
    CLAUSEN, EM
    CRAIGHEAD, HG
    HARBISON, JP
    SCHERER, A
    SCHIAVONE, LM
    VANDERGAAG, B
    FLOREZ, LT
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 2011 - 2014
  • [3] DEFECT STUDY IN GAAS BOMBARDED BY LOW-ENERGY FOCUSED ION-BEAMS
    GAMO, K
    MIYAKE, H
    YUBA, Y
    NAMBA, S
    KASAHARA, H
    SAWARAGI, H
    AIHARA, R
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 2124 - 2127
  • [4] ENERGY-DEPENDENCE AND DEPTH DISTRIBUTION OF DRY ETCHING-INDUCED DAMAGE IN III/V SEMICONDUCTOR HETEROSTRUCTURES
    GERMANN, R
    FORCHEL, A
    BRESCH, M
    MEIER, HP
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1475 - 1478
  • [5] GREEN DL, 1988, 15TH P S GAAS REL CO, P347
  • [6] CHARACTERIZATION OF REACTIVE ION ETCHED ALGAAS/GAAS HETEROSTRUCTURES BY PHOTOLUMINESCENCE AND LOW-TEMPERATURE HALL MEASUREMENTS
    JOSEPH, M
    GUIMARAES, FEG
    KRAUS, J
    TEGUDE, FJ
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03): : 1456 - 1460
  • [7] IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    PETROFF, PM
    MILLER, RC
    GOSSARD, AC
    WIEGMANN, W
    [J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 217 - 219
  • [8] RADICAL BEAM ION-BEAM ETCHING OF GAAS
    SKIDMORE, JA
    COLDREN, LA
    HU, EL
    MERZ, JL
    ASAKAWA, K
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1885 - 1888
  • [9] MOLECULAR-DYNAMICS SIMULATIONS OF DEEP PENETRATION BY CHANNELED IONS DURING LOW-ENERGY ION-BOMBARDMENT OF III-V SEMICONDUCTORS
    STOFFEL, NG
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 651 - 658
  • [10] INVESTIGATION OF REACTIVE ION ETCHING INDUCED DAMAGE IN GAAS-ALGAAS QUANTUM WELL STRUCTURES
    WONG, HF
    GREEN, DL
    LIU, TY
    LISHAN, DG
    BELLIS, M
    HU, EL
    PETROFF, PM
    HOLTZ, PO
    MERZ, JL
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1906 - 1910