DISLOCATION DIPOLES IN STRAINED INGAAS LAYERS GROWN ON GAAS

被引：0

作者：

KIGHTLEY, P ^{[1
]}

ARAGONHERRANZ, G ^{[1
]}

GOODHEW, PJ ^{[1
]}

POND, RC ^{[1
]}

机构：

[1] UNIV CADIZ,DEPT QUIM INORGAN,CADIZ,SPAIN

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1991年 / 117期

关键词：

MISFIT DISLOCATIONS;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Dipole formation at the interfaces of InGaAs/GaAs multilayers has been studied. Slip dipoles with sides along <110> are demonstrated and their use to reduce residual threading dislocation density for strained layer materials is shown. A detailed diffraction contrast analysis has been performed upon dipoles that have <010> line directions. These dipoles also relieve misfit and probably arise from a climb process.

引用

页码：603 / 606

页数：4

共 7 条

[1] NUCLEATION OF MISFIT DISLOCATIONS IN STRAINED-LAYER INGAAS ON GAAS
GREEN, GS
TANNER, BK
BARNETT, SJ
EMENY, M
PITT, AD
WHITEHOUSE, CR
CLARK, GF
[J]. PHILOSOPHICAL MAGAZINE LETTERS, 1990, 62 (03) : 131 - 137
[2] HIRTH JP, 1968, THEORY DISLOCATIONS, P78
[3] MISFIT DISLOCATION DYNAMICS IN SI1-XGEX/(100)SI - UNCAPPED ALLOY LAYERS, BURIED STRAINED LAYERS, AND MULTIPLE QUANTUM-WELLS
HOUGHTON, DC
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (14) : 1434 - 1436
[4] HUANG YJ, 1988, SCANNING MICROSCOPY, V2, P129
[5] THERMAL-STABILITY OF SI/GEXSI1-X/SI HETEROSTRUCTURES
HULL, R
BEAN, JC
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (18) : 1900 - 1902
[6] INJECTION-STIMULATED DISLOCATION-MOTION IN SEMICONDUCTORS
KIMERLING, LC
PETROFF, P
LEAMY, HJ
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (06) : 297 - 300
[7] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS
MATTHEWS, JW
BLAKESLEE, AE
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 118 - 125

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