CONDUCTION BREAKDOWN IN LIGHTLY DOPED P-TYPE GERMANIUM

被引：2
|
作者：
ZITTER, RN
ZHANG, XS
机构：
[1] Physics Department, Southern Illinois University, Carbondale
来源：
PHYSICAL REVIEW B | 1992年 / 46卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.46.3830
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In Ge samples with net acceptor concentrations approximately 10(12) cm-3, the hole concentration changes by four orders of magnitude in conduction breakdown at 4.2 K. The data are in good agreement with a hot-carrier model in which the process of impact ionization is in detailed balance with its inverse, Auger recombination.
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页码：3830 / 3833
页数：4
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