NEW MODEL FOR DAMAGE ACCUMULATION IN SI DURING SELF-ION IRRADIATION

被引：84

作者：

HOLLAND, OW ^{[1
]}

PENNYCOOK, SJ ^{[1
]}

机构：

[1] N TEXAS STATE UNIV,DENTON,TX 76203

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 24期

关键词：

D O I：

10.1063/1.102011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2503 / 2505

页数：3

共 24 条

[11]

Holland O. W., 1985, Radiation Effects, V90, P127, DOI 10.1080/00337578508222524

[12] DAMAGE NUCLEATION AND ANNEALING IN MEV ION-IMPLANTED SI [J].

HOLLAND, OW ;

ELGHOR, MK ;

WHITE, CW .

APPLIED PHYSICS LETTERS, 1988, 53 (14) :1282-1284

[13] NEW ASPECTS OF ENHANCED ION-SCATTERING NEAR 180-DEGREES [J].

HOLLAND, OW ;

BARRETT, JH .

PHYSICAL REVIEW B, 1987, 35 (13) :6495-6503

[14] FEATURES OF COLLISION CASCADES IN SILICON AS DETERMINED BY TRANSMISSION ELECTRON-MICROSCOPY [J].

HOWE, LM ;

RAINVILLE, MH .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :143-151

[15]

KULIKANSKAS VS, 1968, ZH EKSP TEOR FIZ+, V26, P321

[16] ION IMPLANTATION OF SILICON AND GERMANIUM AT ROOM TEMPERATURE . ANALYSIS BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

MAYER, JW ;

ERIKSSON, L ;

PICRAUX, ST ;

DAVIES, JA .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :663-&

[17] ATOMIC-STRUCTURE OF COLLISION CASCADES IN ION-IMPLANTED SILICON AND CHANNELING EFFECTS [J].

NARAYAN, J ;

OEN, OS ;

FATHY, D ;

HOLLAND, OW .

MATERIALS LETTERS, 1985, 3 (03) :67-72

[18] SOLID-PHASE-EPITAXIAL GROWTH AND FORMATION OF METASTABLE ALLOYS IN ION-IMPLANTED SILICON [J].

NARAYAN, J ;

HOLLAND, OW ;

APPLETON, BR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :871-887

[19]

Olson G. L., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P141

[20] COMPARATIVE-STUDY OF UNIAXIAL CHANNELING-BLOCKING AND SINGLE-ALIGNMENT CHANNELING BACKSCATTERING-REVERSIBILITY AND DEFECT ANALYSIS [J].

PRONKO, PP ;

THOMPSON, LJ .

PHYSICAL REVIEW B, 1977, 16 (01) :4-9

← 1 2 3 →