NEW MODEL FOR DAMAGE ACCUMULATION IN SI DURING SELF-ION IRRADIATION

被引：84

作者：

HOLLAND, OW ^{[1
]}

PENNYCOOK, SJ ^{[1
]}

机构：

[1] N TEXAS STATE UNIV,DENTON,TX 76203

来源：

关键词：

D O I：

10.1063/1.102011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2503 / 2505

页数：3

共 24 条

[1]

Appleton B. R., 1970, Atomic collision phenomena in solids, P417

[2]

BAUER LO, 1983, ION IMPLANTATION SEM, V1, P119

[3] DEFECT STUDIES IN CRYSTALS BY MEANS OF CHANNELING [J].

BOGH, E .

[4]

Chadderton L. T., 1971, Radiation Effects, V8, P77, DOI 10.1080/00337577108231012

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

DENNIS, JR ;

HALE, EB .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04) :219-225

[7]

Eisen F. H., 1971, Radiation Effects, V7, P143, DOI 10.1080/00337577108232575

[8]

EISEN FH, 1970, P EUROPEAN C ION IMP, P227

[9]

ELGHOR MK, IN PRESS J MATER RES

[10]

HIRVONEN JK, 1971, P 2 INT C ION IMPL S, P8