SOME CONSIDERATIONS OF THE LIMITATIONS OF THE AUGER-DEPTH-PROFILING TECHNIQUE AS APPLIED TO SILVER METAL AND (100) SURFACES OF INDIUM-PHOSPHIDE

被引：8

作者：

JONES, CJ

KIRK, DL

机构：

[1] Interfacial Physics Group, Department of Electrical and Electronic Engineering, University of Nottingham, Nottingham

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1979年 / 12卷 / 06期

关键词：

D O I：

10.1088/0022-3727/12/6/008

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study has been made of the way an electron beam can alter the surface composition of silver metal and (100) indium phosphide during the course of an Auger-profiling experiment. The interaction between electron beam and material has been examined for various conditions of the metal and semiconductor surface. Distinct differences in behaviour have been found to exist between a beam of electrons impinging upon a contaminated surface and a similar beam incident upon a clean surface.

引用

页码：837 / 844

页数：8

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