CONTROL OF RESIDUAL IMPURITIES IN VERY HIGH-PURITY GAAS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：37
作者：
SHASTRY, SK
ZEMON, S
KENNESON, DG
LAMBERT, G
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 02期
关键词：
D O I：
10.1063/1.99034
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：150 / 152
页数：3
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