MOLECULAR-BEAM EPITAXY OF INP USING LOW-ENERGY P+ ION-BEAM

被引：6
作者：
MARUNO, S
MORISHITA, Y
ISU, T
NOMURA, Y
OGATA, H
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(87)90414-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：338 / 343
页数：6
相关论文
共 15 条
[1]   MECHANISMS OF EPITAXIAL GAAS CRYSTAL-GROWTH BY SPUTTER DEPOSITION - ROLE OF ION SURFACE INTERACTIONS [J].
BARNETT, SA ;
GREENE, JE .
SURFACE SCIENCE, 1983, 128 (2-3) :401-416
[2]   ELECTRICAL AND OPTICAL-PROPERTIES OF INP GROWN BY MOLECULAR-BEAM EPITAXY USING CRACKED PHOSPHINE [J].
CHOW, R ;
CHAI, YG .
APPLIED PHYSICS LETTERS, 1983, 42 (04) :383-385
[3]   A PH3 CRACKING FURNACE FOR MOLECULAR-BEAM EPITAXY [J].
CHOW, R ;
CHAI, YG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (01) :49-54
[4]   ON THE DESIGN AND CHARACTERIZATION OF A NOVEL ARSINE CRACKING FURNACE UTILIZING CATALYTIC DECOMPOSITION OF ASH3 TO YIELD A PURELY MONOMERIC SOURCE OF ARSENIC FOR MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].
KAPITAN, LW ;
LITTON, CW ;
CLARK, GC ;
COLTER, PC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :280-284
[5]   GAS SOURCE MBE GROWTH OF HIGH-QUALITY INP USING TRIETHYLINDIUM AND PHOSPHINE [J].
KAWAGUCHI, Y ;
ASAHI, H ;
NAGAI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (04) :L221-L223
[6]   PHOTO-LUMINESCENCE OF UNDOPED (100) INP HOMOEPITAXIAL FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].
KAWAMURA, Y ;
IKEDA, M ;
ASAHI, H ;
OKAMOTO, H .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :481-484
[7]   SUBSTRATE-TEMPERATURE LIMITS FOR EPITAXY OF INP BY MBE [J].
NORRIS, MT ;
STANLEY, CR .
APPLIED PHYSICS LETTERS, 1979, 35 (08) :617-620
[8]   GAS SOURCE MBE OF INP AND GAXIN1-XPYAS1-Y - MATERIALS PROPERTIES AND HETEROSTRUCTURE LASERS [J].
PANISH, MB ;
TEMKIN, H ;
SUMSKI, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :657-665
[9]   EFFECTS OF GROWTH TEMPERATURE ON OPTICAL AND DEEP LEVEL SPECTROSCOPY OF HIGH-QUALITY INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
PUDENZI, MAA ;
MOHAMMED, K ;
MERZ, JL ;
KASEMSET, D ;
HESS, KL .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2788-2792
[10]   HOMOEPITAXIAL MOLECULAR-BEAM GROWTH OF INP ON THERMALLY CLEANED (100) ORIENTED SUBSTRATES [J].
ROBERTS, JS ;
DAWSON, P ;
SCOTT, GB .
APPLIED PHYSICS LETTERS, 1981, 38 (11) :905-907
12