MULTILAYERS AS MICROLABS FOR POINT-DEFECTS - EFFECT OF STRAIN ON DIFFUSION IN SEMICONDUCTORS

被引:26
作者
BAUMANN, FH
HUANG, JH
RENTSCHLER, JA
CHANG, TY
OURMAZD, A
机构
[1] AT and T Bell Laboratories, Holmdel
关键词
D O I
10.1103/PhysRevLett.73.448
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We describe how a systematic variation of experimental parameters can tum multilayers into microscopic laboratories for point defects. The effects of composition, doping, and strain on point defect diffusion and interdiffusion can thus be separated. This approach also allows one to determine the nature and the charge state of the mediating defect. More specifically, our results show interdiffusion in the model system InAlAs is mediated by a double-acceptor, vacancylike defect, with an activation energy of 4.0 eV in In0.52Al0.48As. This activation energy changes by 51 meV per % strain.
引用
收藏
页码:448 / 451
页数:4
相关论文
共 16 条
[1]   MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8775-8792
[2]   GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29
[3]   ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (12) :1327-1330
[4]  
BOURRET A, COMMUNICATION
[5]   ATOM DIFFUSION AND IMPURITY-INDUCED LAYER DISORDERING IN QUANTUM WELL III-V SEMICONDUCTOR HETEROSTRUCTURES [J].
DEPPE, DG ;
HOLONYAK, N .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) :R93-R113
[6]   RELAXED GEXSI1-X STRUCTURES FOR III-V INTEGRATION WITH SI AND HIGH MOBILITY 2-DIMENSIONAL ELECTRON GASES IN SI [J].
FITZGERALD, EA ;
XIE, YH ;
MONROE, D ;
SILVERMAN, PJ ;
KUO, JM ;
KORTAN, AR ;
THIEL, FA ;
WEIR, BE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1807-1819
[7]  
HEINEMANN M, 1991, APPL SURF SCI, V56, P628
[9]   NONLINEAR DIFFUSION IN MULTILAYERED SEMICONDUCTOR SYSTEMS [J].
KIM, Y ;
OURMAZD, A ;
BODE, M ;
FELDMAN, RD .
PHYSICAL REVIEW LETTERS, 1989, 63 (06) :636-639
[10]   FREE CARRIER AND MANY-BODY EFFECTS IN ABSORPTION-SPECTRA OF MODULATION-DOPED QUANTUM WELLS [J].
LIVESCU, G ;
MILLER, DAB ;
CHEMLA, DS ;
RAMASWAMY, M ;
CHANG, TY ;
SAUER, N ;
GOSSARD, AC ;
ENGLISH, JH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) :1677-1689